Localized charge injection through the gate oxide over gate-drain overlap region: mechanism, device dependence, and application for device diagnostics

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1996, Pages 869-872

  Brozek, Tomasz ^a   Sridharan, Anand ^a   Werking, James ^a   Chan, Y David ^a   Viswanathan, Chand R ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); INTEGRATED CIRCUIT TESTING; OXIDES; RELIABILITY;

GATE INDUCED DRAIN LEAKAGE; GATE OXIDE; LOCALIZED CHARGE INJECTION; PLASMA EDGE DAMAGE;

MOSFET DEVICES;

EID: 0030408976     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)