Gate oxide reliability of drain-side stresses compared to gate stresses

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 73-78

  Dumin, N A ^a   Liu, Kaiping ^a   Yang, Shyh Horng ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Circuits; Instruments; MOSFETs; Predictive models; Silicon; Stress; Voltage

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); INSTRUMENTS; NETWORKS (CIRCUITS); RELIABILITY; SILICON; STRESSES;

DRAIN STRESS; GATE OXIDE; GATE OXIDE BREAKDOWN; GATE OXIDE RELIABILITY; GATE STRESS; MOSFETS; PREDICTIVE MODELS; TCAD SIMULATION;

ELECTRIC BREAKDOWN;

EID: 3042608960     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996612     Document Type: Conference Paper

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