Experimental and Monte Carlo analysis of drain-avalanche hot-hole injection for reliability optimization in Flash memories

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 157-160

  Ielmini, D ^a   Ghetti, A ^b   Beltrami, S ^a   Spinelli, A S ^c   Lacaita, A L ^a,d   Visconti, A ^b  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

^c UNIVERSITY OF INSUBRIA   (Italy)

^d IFN CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRON TUNNELING; GATES (TRANSISTOR); IMPACT IONIZATION; INJECTION LASERS; LEAKAGE CURRENTS; MONTE CARLO METHODS; OPTIMIZATION; SUBSTRATES;

GATE INDUCED DRAIN LEAKAGE (GIDL) CURRENT; SECONDARY ELECTRONS (SE);

FLASH MEMORY;

EID: 0842309827     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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4. J. Chen et al., "Subbreakdown drain leakage current in MOSFETs," IEEE Electron Device Lett., vol. 8, pp. 515-517, Nov. 1987.
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8. J. D. Bude et al., "Secondary electron Flash - a high performance, low power Flash technology for 0.35 μm and below," in IEDM Tech. Dig., pp. 279-282, 1997.