On the punchthrough phenomenon in submicron MOS transistors

IEEE Transactions on Electron Devices

Volumn 44, Issue 5, 1997, Pages 847-855

  Fu, Kuan Yu ^a   Tsang, Yuk L ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC SPACE CHARGE; GATES (TRANSISTOR); SIMULATION;

PUNCHTHROUGH PHENOMENON;

MOS DEVICES;

EID: 0031146604     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568048     Document Type: Article

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