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Surface Science

Volumn 482-485, Issue PART 2, 2001, Pages 1445-1450

Scanning tunneling microscopy study on c(4 × 4) structure of Si(100)

(2) Maeng, Jae Yeol a Kim, Sehun a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

Carbon; Hydrogen atom; Scanning tunneling microscopy; Silicon; Single crystal surfaces; Surface relaxation and reconstruction

Indexed keywords

EID: 0008791288 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)00738-5 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.