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Volumn 497, Issue 1-3, 2002, Pages 47-58
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New features of the Si(1 0 0)-c(4 × 4) reconstruction observed with STM: Suggestion of the structure with lowered symmetry
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Author keywords
Low index single crystal surfaces; Scanning tunneling microscopy; Semi empirical models and model calculations; Silicon; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography
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Indexed keywords
ANNEALING;
CRYSTAL ORIENTATION;
CRYSTAL SYMMETRY;
DIMERS;
MATHEMATICAL MODELS;
POINT DEFECTS;
RELAXATION PROCESSES;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING SILICON;
SINGLE CRYSTALS;
SURFACE ATOMIC DENSITY;
SURFACE ROUGHNESS;
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EID: 0037137867
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(01)01623-5 Document Type: Article |
Times cited : (19)
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References (40)
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