X-ray photoelectron diffraction study of Si(001)c(4 × 4)-C surface

Surface Science

Volumn 412-413, Issue , 1998, Pages 125-131

  Kosugi, R ^a   Sumitani, S ^a   Abukawa, T ^a   Takakuwa, Y ^a   Suzuki, S ^a   Sato, S ^a   Kono, S ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Carbide; Carbonization; Diffusion; Ethylene; LEED; Si(001); X ray photoelectron diffraction

Indexed keywords

ANISOTROPY; CARBONIZATION; ETHYLENE; LOW ENERGY ELECTRON DIFFRACTION; SILICON ALLOYS; SURFACE PHENOMENA; X RAY DIFFRACTION ANALYSIS;

SINGLE-SCATTERING-CLUSTER (SSC); X-RAY PHOTOELECTRON DIFFRACTION;

SILICON CARBIDE;

EID: 0032166559     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00377-X     Document Type: Article

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