Growth and characterization of epitaxial ferroelectric lanthanum- substituted bismuth titanate nanostructures with three different orientations

Journal of Applied Physics

Volumn 98, Issue 12, 2005, Pages

  Lee, Sung Kyun ^a   Hesse, Dietrich ^a   Alexe, Marin ^a   Lee, Woo ^a   Nielsch, Kornelius ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH TITANATE; CRYSTAL SUBSTRATES; GOLD NANOTUBE; PIEZORESPONSE MODE;

ARRAYS; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; ELECTRODES; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; GOLD; LANTHANUM COMPOUNDS; NANOTUBES; PULSED LASER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NANOSTRUCTURED MATERIALS;

EID: 29744455064     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2140870     Document Type: Review

References (34)

1. C. A. P. de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995).
2. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature (London) 401, 682 (1999).
3. H. N. Lee, D. Hesse, N. Zakharov, and U. Gösele, Science 296, 2006 (2002).
4. Y. S. Kim, D. H. Kim, J. D. Kim, Y. J. Chang, T. W. Noh, J. H. Kong, K. Char, Y. D. Park, S. D. Bu, J.-G. Yoon, and J.-S. Chung, Appl. Phys. Lett. 86, 102907 (2005).
5. M.-W. Chu, I. Szafraniak, R. Scholz, C. Harnagea, D. Hesse, M. Alexe, and U. Gösele, Nat. Mater. 3, 87 (2004).
6. M. Alexe, C. Harnagea, D. Hesse, and U. Gösele, Appl. Phys. Lett. 79, 242 (2001).
7. A. Gruverman, B. J. Rodriguez, A. I. Kingon, R. J. Nemanich, J. S. Cross, and M. Tsukada, Appl. Phys. Lett. 82, 3071 (2003).
8. J. Junquera and P. Ghosez, Nature (London) 422, 506 (2003).
9. A. D. Rae, J. G. Thompson, and R. L. Withers, Acta Crystallogr., Sect. B: Struct. Sci. 48, 418 (1992).
10. A. D. Rae, J. G. Thompson, R. L. Withers, and A. C. Willis, Acta Crystallogr., Sect. B: Struct. Sci. 46, 474 (1990).
11. J. Lettieri, M. A. Zurbuchen, Y. Jia, D. G. Schlom, S. K. Streiffer, and M. E. Hawley, Appl. Phys. Lett. 76, 2937 (2000).
12. J. Lettieri, M. A. Zurbuchen, Y. Jia, D. G. Schlom, S. K. Streiffer, and M. E. Hawley, Appl. Phys. Lett. 77, 3090 (2000).
13. T. Watanabe, H. Funakubo, and K. Saito, J. Mater. Res. 16, 303 (2001).
14. H. N. Lee and D. Hesse, Appl. Phys. Lett. 80, 1040 (2002).
15. A. Garg, Z. H. Barber, M. Dawber, J. F. Scott, A. Snedden, and P. Lightfoot, Appl. Phys. Lett. 83, 2414 (2003).
16. S. K. Lee, W. Lee, M. Alexe, K. Nielsch, D. Hesse, and U. Gösele, Appl. Phys. Lett. 86, 152906 (2005).
17. S. Okamura, K. Mori, T. Tsukamoto, and T. Shiosaki, Integr. Ferroelectr. 18, 311 (1997).
18. C. S. Ganpule, A. Stanishevsky, S. Aggarwal, J. Melngailis, E. Williams, R. Ramesh, V. Joshi, and C. P. de Araujo, Appl. Phys. Lett. 75, 3874 (1999).
19. I. Szafraniak, C. Harnagea, R. Scholz, S. Bhattacharyya, D. Hesse, and M. Alexe, Appl. Phys. Lett. 83, 2211 (2003).
20. W. Ma, C. Harnagea, D. Hesse, and U. Gösele, Appl. Phys. Lett. 83, 3770 (2003).
21. H. Masuda and M. Satoh, Jpn. J. Appl. Phys., Part 1 35, L126 (1996).
22. X. Mei, D. Kim, H. E. Ruda, and Q. X. Guo, Appl. Phys. Lett. 81, 361 (2002).
23. J. Liang, H. Chik, A. Yin, and J. Xu, J. Appl. Phys. 91, 2544 (2002).
24. S. M. Park, C. H. Bae, W. Nam, S. C. Park, and J. S. Ha, Appl. Phys. Lett. 86, 023104 (2005).
25. W. Lee, M. Alexe, K. Nielsch, and U. Gösele, Chem. Mater. 17, 3325 (2005).
26. J. Choi, K. Nielsch, M. Reiche, R. B. Wehrspohn, and U. Gösele, J. Vac. Sci. Technol. B 21, 763 (2003).
27. C. B. Eom, R. J. Cava, R. M. Fleming, J. M. Phillips, R. B. van Dover, J. H. Marshall, J. W. P. Hsu, J. J. Krajewski, and W. F. Peck, Jr., Science 258, 1766 (1992).
28. W. Ma and D. Hesse, Appl. Phys. Lett. 85, 3214 (2004).
29. S. K. Lee, Ph.D. thesis, Martin Luther University Halle-Wittenberg, Halle, 2005.
30. W. Ma and D. Hesse, Appl. Phys. Lett. 84, 2871 (2004).
31. C. Harnagea, A. Pignolet, M. Alexe, D. Hesse, and U. Gösele, Appl. Phys. A: Mater. Sci. Process. 70, 261 (2000).
32. H. Maiwa, N. Iizawa, D. Togawa, T. Hayashi, W. Sakamoto, M. Yamada, and S. Hirano, Appl. Phys. Lett. 82, 1760 (2003).
33. C. Harnagea, A. Pignolet, M. Alexe, and D. Hesse, Integr. Ferroelectr. 44, 113 (2002).
34. A. Sa Neto and L. E. Cross, J. Mater. Sci. 17, 1409 (1982).