Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

Journal of Materials Research

Volumn 16, Issue 1, 2001, Pages 303-307

  Watanabe, Takayuki ^a   Funakubo, Hiroshi ^a   Saito, Keisuke ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; COERCIVE FORCE; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FATIGUE OF MATERIALS; FERROELECTRICITY; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POLARIZATION; SINGLE CRYSTALS; SUBSTRATES;

REMANENT POLARIZATION;

THIN FILMS;

EID: 0035239652     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2001.0046     Document Type: Article

References (15)