Molecular-beam epitaxial growth of GaAs and InGaAs/GaAs nanodot arrays using anodic Al2O3 nanohole array template masks

Applied Physics Letters

Volumn 81, Issue 2, 2002, Pages 361-363

  Mei, X ^a   Kim, D ^a   Ruda, H E ^a   Guo, Q X ^b  

^a UNIVERSITY OF TORONTO   (Canada)

^b SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTRA; DOT ARRAY; DOT DIAMETER; EMISSION PEAKS; GAAS; GAAS SUBSTRATES; GAAS(001); HEXAGONAL LATTICE; HIGH QUALITY; HIGHLY ORDERED ARRAYS; INGAAS/GAAS; LATERAL SHAPES; LATTICE PERIODS; NANO CHANNELS; NANO-DOT ARRAYS; NANO-SIZED; NANOHOLE ARRAYS; NANOSIZED DOTS; QUANTUM DOT ARRAYS;

ALUMINA; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAMS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM;

ANODIC OXIDATION;

EID: 79956007218     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1484554     Document Type: Article

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