Defect-related noise in AlN and AlGaN alloys

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 69-72

  Goennenwein, S T B ^a   Zeisel, R ^a   Baldovino, S ^a,b   Ambacher, O ^a   Brandt, M S ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b LABORATORIO MDM   (Italy)

Author keywords

AlN; DX center; Electronic noise; Group III nitrides

Indexed keywords

DEFECTS; GROUND STATE; POTENTIAL ENERGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

POTENTIAL ENERGY BARRIERS;

ALUMINUM ALLOYS;

EID: 0035670659     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00655-X     Document Type: Article

References (8)