Low frequency gate noise in a diode-connected MESFET: Measurements and modeling

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 628-633

  Lambert, Benoît ^b   Malbert, Nathalie ^b   Verdier, Frédéric ^b   Labat, Nathalie ^b   Touboul, André ^b   Vandamme, Lode K J ^a,c  

^a IEEE

^b UNIVERSITÉ BORDEAUX 1   (France)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Noise measurements; Power MESFETs; Reliability; Shot noise

Indexed keywords

CORRELATION METHODS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; FREQUENCIES; GATES (TRANSISTOR); PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SHOT NOISE; SIGNAL NOISE MEASUREMENT; SPECTRUM ANALYSIS;

DRAIN CURRENTS; TRAP DENSITY;

MESFET DEVICES;

EID: 0035308146     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915666     Document Type: Article

References (17)

1. Noise as a diagnostic tool for quality and reliability of electronic devices
2. 1/d noise 1/f noise in MOS transistors due to number of mobility fluctuations
3. Comparison of conventional and pseudomorphic HEMT's performances by drain current transient spectroscopy and L.F. channel noise
4. 1-x As heterostructures
5. Gate current 1/f noise in GaAs MESFET's
6. Ultra-high breakdown high-performance AIInAs/GaInAs/InP power HEMTs
7. Surface states effects on GaAs FET electrical performance
8. Recess dependent breakdown behavior of GaAs HFETs
9. The effect of gate recess profile on device performance of GaInP/InGaAs DCFET's
10. Theory and experiments of 1/f noise in Schottky-barrier diodes operating in the thermionic-emission mode
11. Low frequency noise in Schottky barrier diodes
12. 1/f is no surface effect
13. Investigation on GaAs power MESFET's submitted to rf life-test by LF noise and drain current transient analysis
14. Effects of rf life-test on LF electrical parameters of GaAs power MESFETs
15. Model for the electrical behavior of a microplasma
16. + diffusion-current-dominated (HgCd)Te avalanche photodiodes