Evolution of DC and RF degradation induced by high-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMT MMICs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2002, Pages 241-247

  Chou, Y C ^a   Leung, D ^a   Lai, R ^a   Grundbacher, R ^a   Eng, D ^a   Scarpulla, J ^a   Barsky, M ^a   Liu, P H ^a   Biedenbender, M ^a   Oki, A ^a   Streit, D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Acceleration; Degradation; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MMICs; PHEMTs; Radio frequency

Indexed keywords

ACCELERATION; ACTIVATION ENERGY; ARSENIC COMPOUNDS; CHEMICAL ACTIVATION; DEGRADATION; ELECTRONIC EQUIPMENT TESTING; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; INDIUM COMPOUNDS; INDIUM PHOSPHIDE; MICROWAVE AMPLIFIERS; MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; TESTING;

ACCELERATED LIFE TESTS; INDIUM GALLIUM ARSENIDE; MICROWAVE DEGRADATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS (MMIC); PHEMTS; RADIO FREQUENCIES; RELIABILITY INVESTIGATIONS; RELIABILITY PERFORMANCE;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 84949192358     PISSN: 15417026     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996643     Document Type: Article

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