Electronic structures of high-k transition metal silicates: First-principles calculations

Microelectronics Journal

Volumn 35, Issue 8, 2004, Pages 655-658

  Samantaray, C B ^a   Sim, Hyunjun ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Ab initio calculation; Band gap; Density of states (DOS); High k; TM silicates

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; ENERGY GAP; OPTIMIZATION; PROBABILITY DENSITY FUNCTION; SILICATES;

AB-INITIO CALCULATIONS; BAND OFFSET; DENSITY OF STATES (DOS);

TRANSITION METAL COMPOUNDS;

EID: 2942754149     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2004.04.006     Document Type: Article

References (22)

1. Qi W.J., Nieh R., Lee B.H., Kang L., Jeon Y., Onishi K., Ngai T., Banerjee S., Lee J.C. Tech. Dig.-Int. Electron Devices Meet. 1999;145.
2. Copel M., Gribelyuk M., Gsev E. Appl. Phys. Lett. 76:2000;436.
3. Wilk G.D., Wallace R.M., Anthony J.M. J. Appl. Phys. 87:2000;484.
4. Wu Y.H., Yang M.Y., Chin A., Chen W.J., Kwei C.M. IEEE Electron Device Lett. 21:2000;241.
5. Kwo J., Hong M., Kortan A.R., Queeney K.T., Chabal Y.J., Mannaerts J.P., Boone T., Krajewski J.J., Sergent A.M., Rosamilia J.M. Appl. Phys. Lett. 77:2000;130.
6. Ono H., Katsumata T. Appl. Phys. Lett. 78:2001;1832.
7. Kawamoto A., Cho K., Griffin P., Dutton R. J. Appl. Phys. 90:2001;1333.
8. Jameson J., Harrison W., Griffin P. J. Appl. Phys. 90:2001;4570.
9. Kawamoto A., Jameson J., Griffin P., Cho K., Dutton R. IEEE Electron Device Lett. 22:2001;14.
10. Peacock J., Robertson. J. Appl. Phys. 92:2002;4712.
11. Ikarashi N., Manabe K. J. Appl. Phys. 94:2003;480.
12. Payne M.C., Teter M.P., Allan D.C., Arias T.A., Joannopou-los J.D. Rev. Mod. Phys. 64:1992;1045.
13. Accelrys Inc., Materials Studio CASTEP, Accelrys Inc., San Diego, 2001.
14. Perdew J.P., Zunger A. Phys. Rev. B. 23:1981;5048.
15. Teter M.P., Payne M.C., Allan D.C. Phys. Rev. B. 40:1989;12255.
16. Monkhorst H.J., Pack J.D. Phy. Rev. B. 13:1976;5188.
17. Tang S., Wallace R., Seabaugh A., King-Smith D. Appl. Surf. Sci. 135:1998;137.
18. Lucovsky G., Zhang Y., Ryner G.B. Jr., Appel G., Ade H., Whitten J.L. J. Vac. Sci. Technol. B. 20:(4):2002;1739.
19. Lim S., Kriventsov S., Jackson T.N., Haeni J.H., Schlom D.G., Balbashov A.M., Uecker R., Reiche P., Freeouf J.L., Lucovsky G. J. Appl. Phys. 91:2002;4500.
20. Lucovsky G., Rayner G.B. Jr., Kang D., Appel G., Johnson R.S., Zhang Y., Sayers D.E., Ade H., Whitten J.L. Appl. Phys. Lett. 79:2001;1775.
21. Lucovsky G. Microelect. Reliab. 43:2003;1417.
22. Gusev E.P., Cartier E., Buchanan D.A., Gribelyuk M., Copel M., Okorn-Schmidt H., D'Emic C. Microelectr. Eng. 59:2001;34.