Systematic studies of SiGe/Si islands nucleated via separate in situ, or ex situ, Ga+ focused ion beam-guided growth techniques

Materials Research Society Symposium - Proceedings

Volumn 794, Issue , 2003, Pages 111-116

  Vandervelde, T E ^a   Atha, S ^a   Pernell, T L ^a   Hull, R ^a   Bean, J C ^a  

^a University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON MULTIPLIERS; GALLIUM; ION BEAMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE CHEMISTRY;

DISLOCATION FORMATION; FOCUSED ION BEAMS; ISLAND CONCENTRATION; ISLAND TOPOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 2942689825     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-794-t4.7     Document Type: Conference Paper

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