Morphological changes of Si(100) induced by focused ion beam irradiation

Applied Surface Science

Volumn 135, Issue 1-4, 1998, Pages 129-136

  Wang, J B ^a   Datta, A ^b   Wang, Y L ^b  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NONE

Author keywords

Irradiation; Morphological changes; Si(100)

Indexed keywords

AMORPHIZATION; CURRENT DENSITY; DEPOSITION; GOLD; ION BEAMS; ION BOMBARDMENT; MORPHOLOGY; SEMICONDUCTING GALLIUM; SUBSTRATES;

FOCUSED ION BEAM IRRADIATION;

SEMICONDUCTING SILICON;

EID: 0032475206     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00285-2     Document Type: Article

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