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Journal of Crystal Growth

Volumn 231, Issue 4, 2001, Pages 474-487

Control of structure, size and density of Ge dot on Si (1 0 0) through multistep procedure

(5) Wakayama, Y a,b Gerth, G a Werner, P a Gosele U a Sokolov, L V c

a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

A1. Nanostructures; A3. Molecular beam epitaxy; B2. Semiconducting germanium; B2. Semiconducting silicon

Indexed keywords

ANNEALING; DENSITY (SPECIFIC GRAVITY); DEPOSITION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; WETTING;

STRUCTURE MODIFICATION;

SEMICONDUCTING GERMANIUM;

EID: 0035502183 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01548-2 Document Type: Article

Times cited : (5)

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