Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 84-87

  Takamiya, H ^a   Miura, M ^b   Usami, N ^b   Hattori, T ^a   Shiraki, Y ^b  

^a TOKYO CITY UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; DEPOSITION; FILM GROWTH; MORPHOLOGY; NUCLEATION; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

BORON ADLAYERS;

SEMICONDUCTING FILMS;

EID: 0034229201     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00840-3     Document Type: Article

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