Investigation of intrinsic channel characteristics of hydrogenated amorphous silicon thin-film transistors by gated-four-probe structure

Applied Physics Letters

Volumn 72, Issue 22, 1998, Pages 2874-2876

  Chiang, Chun Sung ^a   Chen, Chun Ying ^a   Kanicki, Jerzy ^a   Takechi, Kazushige ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141764631     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121484     Document Type: Article

References (6)

1. M. J. Powell, IEEE Trans. Electron Devices 36, 2915 (1989).
2. C.-Y. Chen and J. Kanicki, IEEE Electron Device Lett. 18, 340 (1997).
3. C.-Y. Chen and J. Kanicki, SPIE Proc. 3014, 30 (1997).
4. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, J. Appl. Phys. 69, 2339 (1991).
5. R. E. I. Schropp, J. Snijder, and J. F. Verwey, J. Appl. Phys. 60, 643 (1986).
6. C.-Y. Chen and J. Kanicki, Solid-State Electron. 42, 705 (1998).