Dependence of magnetic tunnel junction's reliability on oxidation condition

Journal of Applied Physics

Volumn 95, Issue 11 II, 2004, Pages 6786-6788

  Kim, Kwang Seok ^a   Jang, Y M ^a   Park, J M ^a   Cho, B K ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRON TRAPS; HIGH ENERGY PHYSICS; ION BOMBARDMENT; MAGNETIC MATERIALS; MAGNETORESISTANCE; MATHEMATICAL MODELS; OXIDATION; OXYGEN; PERCOLATION (SOLID STATE); PLASMAS; REDUCTION; RELIABILITY; TRANSMISSION ELECTRON MICROSCOPY; WEIBULL DISTRIBUTION;

MAGNETIC TUNNEL JUNCTIONS (MTJ); PLASMA OXIDATION; TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB); TUNNELING BARRIERS;

TUNNEL JUNCTIONS;

EID: 2942655225     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1688232     Document Type: Conference Paper

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