60% magnetoresistance at room temperature in Co-Fe/Al-O/Co-Fe tunnel junctions oxidized with Kr-O2 plasma

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3135-3137

  Tsunoda, Masakiyo ^a   Nishikawa, Kazuhiro ^a   Ogata, Satoshi ^a   Takahashi, Migaku ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC ELECTRODES; GAS SPECIES; MAGNETIC TUNNEL JUNCTION; OXIDIZATION; OXIDIZATION RATES; PLASMA OXIDIZATION; ROOM TEMPERATURE; TUNNEL MAGNETORESISTANCE;

ALUMINUM; ELECTRIC RESISTANCE; IRIDIUM; KRYPTON; MAGNETOELECTRONICS; MAGNETORESISTANCE; MANGANESE; PLASMAS; TUNNEL JUNCTIONS;

MAGNETIC DEVICES;

EID: 79956018279     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1475363     Document Type: Article

References (24)

1. T. Miyazaki and N. Tezuka, J. Magn. Magn. Mater. 139, L231 (1995). jmm JMMMDC 0304-8853
2. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, Phys. Rev. Lett. 74, 3273 (1995). prl PRLTAO 0031-9007
3. S. S. P. Parkin, K. P. Roche, M. G. Samant, P. M. Rice, R. B. Beyers, R. E. Scheuerlein, E. J. O'Sullivan, S. L. Brown, J. Bucchigano, D. W. Abraham, Y. Lu, M. Rooks, P. L. Trouilloud, R. A. Wanner, and W. J. Gallagher, J. Appl. Phys. 85, 5828 (1999). jap JAPIAU 0021-8979
4. H. Kikuchi, M. Sato, and K. Kobayashi, J. Appl. Phys. 87, 6055 (2000). jap JAPIAU 0021-8979
5. S. Cardoso, P. P. Freitas, C. de Jesus, P. Wei, and J. C. Soares, Appl. Phys. Lett. 76, 610 (2000). apl APPLAB 0003-6951
6. X. F. Han, M. Oogane, H. Kubota, Y. Ando, and T. Miyazaki, Appl. Phys. Lett. 77, 283 (2000). apl APPLAB 0003-6951
7. E. Nakashio, J. Sugawara, S. Onoe, and S. Kumagai, IEEE Trans. Magn. 36, 2812 (2000). emg IEMGAQ 0018-9464
8. T. Ueno, A. Morioka, S. Chikamura, and Y. Iwasaki, Jpn. J. Appl. Phys., Part 2 39, L327 (2000). jjc JAPLD8 0021-4922
9. K. Sekine, Y. Saito, M. Hirayama, and T. Ohmi, IEEE Trans. Electron Devices 48, 1550 (2001). etd IETDAI 0018-9383
10. N. Ueda, Y. Saito, M. Hirayama, Y. Yamauchi, S. Sugawa, and T. Ohmi, Extended Abstracts of the 2001 International Conference on Solid State Devices Materials (Japan Society of Applied Physics, Tokyo, 2001), p. 164.
11. T. Hamada, Y. Saito, M. Hirayama, H. Aharoni, and T. Ohmi, IEEE Trans. Electron Devices 22, 423 (2001). etd IETDAI 0018-9383
12. N. Goto and M. Yamamoto, Inst. Electr. Commun. Eng. Tech. Rep. 80, 43 (1980) [in Japanese].
13. M. Ando, K. Sakurai, N. Goto, K. Arimura, and Y. Ito, IEEE Trans. Antennas Propag. 33, 1347 (1985). ita IETPAK 0018-926X
14. J. Hirokawa, M. Ando, and N. Goto, IEE Proc. Part H 137, 249 (1990). ihm IPHPE7 0950-107X
15. M. Hirayama and T. Ohmi, Extended Abstracts 1996 International Conference of the American Vacuum Symposium (AVS, New York, 1996), p. 199.
16. T. Yamamoto, N. T. Chien, M. Ando, N. Goto, M. Hirayama, and T. Ohmi, Jpn. J. Appl. Phys., Part 1 38, 2082 (1999). jjb JAPNDE 0021-4922
17. K. Nishikawa, M. Tsunoda, S. Ogata, and M. Takahashi, IEEE Trans. Magn. (submitted).
18. J. S. Moodera, L. R. Kinder, J. Nowak, P. LeClair, and R. Meservey, Appl. Phys. Lett. 69, 708 (1996). apl APPLAB 0003-6951
19. T. Ueno, T. Akiyama, K. Kuroiwa, and Y. Tarui, Appl. Surf. Sci. 79, 502 (1994). asu ASUSEE 0169-4332
20. M. Sato, H. Kikuchi, and K. Kobayashi, J. Appl. Phys. 83, 6691 (1998). jap JAPIAU 0021-8979
21. H. Kikuchi, K. Kobayashi, and M. Sato, J. Magn. Soc. Jpn. 23, 49 (1999). jmj NOJGD3 0285-0192
22. J. J. Sun, V. Soares, and P. P. Freitas, Appl. Phys. Lett. 74, 448 (1999). apl APPLAB 0003-6951
23. Y. Ando, H. Kubota, M. Hayashi, M. Kamijo, K. Yaoita, A. C. C. Yu, X. F. Han, and T. Miyazaki, Jpn. J. Appl. Phys., Part 1 39, 5832 (2000). jjb JAPNDE 0021-4922
24. D. Song, J. Nowak, and M. Covington, J. Appl. Phys. 87, 5197 (2000). jap JAPIAU 0021-8979