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Volumn 39, Issue 5, 2004, Pages 404-407

Mott-hopping processes in neodymium oxide thin films prepared on Si(100) substrates

Author keywords

Dielectric phenomena; Insulating films; Mott VRH; Neodymium oxide

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; DIFFUSION; MOS DEVICES; NEODYMIUM COMPOUNDS; SILICON WAFERS; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 2942544344     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310202     Document Type: Article
Times cited : (16)

References (26)
  • 23
    • 2942590304 scopus 로고    scopus 로고
    • June 18-21, Strasbourg, France, Symposium title: The 300 mm Silicon era: Material, equipment, technology
    • D. Schmeisser and H.-J. Muessig, Abstract of EMRS 2002- spring meeting, June 18-21, Strasbourg, France, Symposium title: The 300 mm Silicon era: Material, equipment, technology.
    • Abstract of EMRS 2002- Spring Meeting
    • Schmeisser, D.1    Muessig, H.-J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.