Correlations between photoluminescence and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 260, Issue 3-4, 2004, Pages 304-308

  Lee, In Hwan ^a   Lee, Cheul Ro ^a   Shin, Dong Chan ^b   Nam, Okhyun ^c   Park, Yongjo ^c  

^a Chonbuk National University   (South Korea)

^b Chosun University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

A1. Photoluminescence; A3. Metalorganic chemical vapor deposition; B1. GaN

Indexed keywords

CRYSTALLOGRAPHY; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRON MOBILITY; ENERGY GAP; EPITAXIAL GROWTH; HALL EFFECT; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POINT DEFECTS; SAPPHIRE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; ELECTRICAL COMPENSATION; EPITAXIAL LAYERS; EXCITON TRANSITIONS;

GALLIUM NITRIDE;

EID: 0345602973     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.08.040     Document Type: Article

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