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Journal of the Korean Physical Society

Volumn 47, Issue SUPPL. 3, 2005, Pages

Characterization of GaN/Si(111) heteroepitaxy with variation of thickness grown by using Al xGa 1-xN superlattice intermediate layer

(5) Han, Hyung Seok a Kim, Dong Wook a Lee, In Hwan a Lee, Cheul Ro a Sone, Chul Soo b

a Chonbuk National University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

AFM; Crack free; MOCVD; PL; Superlattice; XRD

Indexed keywords

EID: 29344473811 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (9)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.