Fabrication and characteristics of blue LED on GaN/Si (111) epitaxy grown with Al 0.3Ga 0.7N/GaN superlattice interlayer

Journal of the Korean Physical Society

Volumn 45, Issue 5 II, 2004, Pages 1356-1360

  Lee, Seong Suk ^a   Seo, In Seok ^a   Kim, Kyong Jun ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

GaN Si(111); I V; L I; LED; MOCVD

Indexed keywords

EID: 10444271737     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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