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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 A, 2003, Pages

High-bright InGaN multiple-quantum-well blue light-emitting diodes on Si (111) using AlN/GaN multilayers with a thin AlN/AlGaN buffer layer

(5) Zhang, Baijun a Egawa, Takashi a Ishikawa, Hiroyasu a Liu, Yang a Jimbo, Takashi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

AlN GaN multilayers; InGaN; LED; MOCVD; MQW

Indexed keywords

ALUMINUM COMPOUNDS; ALUMINUM NITRIDE; CATHODOLUMINESCENCE; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; THERMAL CONDUCTIVITY; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; FULL WIDTH AT HALF MAXIMUM; HIGH RESOLUTION X RAY DIFFRACTION; INDIUM GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE MULTIPLE QUANTUM WELL BLUE LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0038398939 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l226 Document Type: Letter

Times cited : (60)

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