Effect of a buffer layer on GaN growth on a Si(111) substrate with a 3C-SiC intermediate layer

Journal of the Korean Physical Society

Volumn 37, Issue 6, 2000, Pages 1007-1011

  Park, C I ^a   Kang, J H ^a   Kim, K C ^a   Suh, E K ^a   Lim, K Y ^a   Nahm, K S ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034347686     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.37.1007     Document Type: Article

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