Structural and optical properties of GaN using the lateral epitaxy of patterned Si substrate

Journal of the Korean Physical Society

Volumn 47, Issue SUPPL. 3, 2005, Pages

  Kim, Kyong Jun ^a   Han, Hyung Seok ^a   Lee, Cheul Ro ^a   Son, Sung Jin ^b  

^a Chonbuk National University   (South Korea)

^b LG Innotek Co Ltd   (South Korea)

Author keywords

GaN on Si; MOCVD; Patterned substrate; PL; TEM

Indexed keywords

EID: 29344461066     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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