Effects of graphitization degree of crucible on SiC single crystal growth process

Diamond and Related Materials

Volumn 15, Issue 1, 2006, Pages 117-120

  Liu, Junlin ^a   Gao, Jiqiang ^a   Cheng, Jikuan ^a   Yang, Jianfeng ^a   Qiao, Guanjun ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

Graphitization degree; Growth from vapor; Mass transfer; Single crystal growth

Indexed keywords

CRUCIBLES; CRYSTAL GROWTH; GRAPHITIZATION; MASS TRANSFER; SINGLE CRYSTALS; SUBLIMATION;

GRAPHITIZATION DEGREE; GROWTH FROM VAPOR; SINGLE CRYSTAL GROWTH;

SILICON CARBIDE;

EID: 29244445500     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.08.028     Document Type: Article

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