Impact of source material on silicon carbide vapor transport growth process

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 312-316

  Wellmann, P J ^a   Hofmann, D ^a   Kadinski, L ^a   Selder, M ^a   Straubinger, T L ^a   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

A1. Heat transfer; A1. Mass transfer; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL STRUCTURE; HEAT TRANSFER; MASS TRANSFER; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

DIGITAL X RAY IMAGING;

SILICON CARBIDE;

EID: 0035334044     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00881-8     Document Type: Conference Paper

References (9)