Kinetics and modeling of sublimation growth of silicon carbide bulk crystal

Journal of Crystal Growth

Volumn 224, Issue 1-2, 2001, Pages 101-110

  Chen, Q S ^a   Zhang, H ^a   Prasad, V ^a   Balkas, C M ^b   Yushin, N K ^b   Wang, S ^c  

^a Stony Brook University   (United States)

^b Sterling Semiconductor Inc   (United States)

^c Advanced Technology Materials Inc   (United States)

Author keywords

A1. Growth models; A1. Heat transfer; A1. Mass transfer; A1. Radiation; A2. Growth from vapor; B2. Semiconducting silicon carbide

Indexed keywords

CRYSTAL GROWTH; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; PRESSURE EFFECTS; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SUBLIMATION; TRANSPORT PROPERTIES; VAPORS;

SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 0035310340     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00816-8     Document Type: Article

References (24)

1. Mechanisms of the chemical vapour deposition of silicon
2. Bulk crystal growth by physical vapour transport
3. A system model for silicon carbide crystal growth by physical vapor transport