Sublimation growth of 50mm diameter SiC wafers

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 13-16

  Powell, A R ^a   Wang, S ^a   Fechko, G ^a   Brandes, G R ^a  

^a Epitronics   (United States)

Author keywords

Single Crystal Expansion; Sublimation Growth; Substrate

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; ETCHING; FINITE ELEMENT METHOD; GRAIN BOUNDARIES; IMAGING TECHNIQUES; MATHEMATICAL MODELS; SILICON CARBIDE; SINGLE CRYSTALS; SUBLIMATION; X RAY CRYSTALLOGRAPHY;

CROSS POLARIZER IMAGING; PREFERENTIAL DEFECT ETCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031702267     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.13     Document Type: Article

References (14)

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13. A defect etch map of this sample wafer is supplied with vended substrate.
14. For proprietry purposes both length and temperature scales are not present in this figure.