Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 308-312

  Pons, M ^a   Blanquet, E ^a   Dedulle, J M ^b   Madar, R ^b   Bernard, C ^a  

^a UNIV GRENOBLE ALPES   (France)

^b LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

Author keywords

Macroscopic models; Silicon carbide; Single crystals; Sublimation growth

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL GROWTH; HEAT TRANSFER; MASS TRANSFER; MATHEMATICAL MODELS; SILICON CARBIDE; SUBLIMATION; THERMAL GRADIENTS;

MACROSCOPIC MODELS; MASS TRANSPORT MODELLING; THERMAL MODELLING;

SINGLE CRYSTALS;

EID: 0041725668     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01995-2     Document Type: Article

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