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Volumn 41, Issue 12, 2005, Pages 1300-1304

Preparation and properties of thin HfO 2 films

Author keywords

[No Author keywords available]

Indexed keywords


EID: 29144490594     PISSN: 00201685     EISSN: 16083172     Source Type: Journal    
DOI: 10.1007/s10789-005-0305-8     Document Type: Article
Times cited : (18)

References (22)
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    • Hino, S., Nakayama, M., Takashi, K., et al., Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Precursors, Jpn. J. Appl. Phys., Part 1, 2003, vol. 42, no. 9, pp. 6015-6018.
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    • Investigation of the Chemical State of Ultrathin Hf-Al-O Films during High Temperature Annealing
    • Cho, M.-H., Chang, H.S., Cho, Y.J., et al., Investigation of the Chemical State of Ultrathin Hf-Al-O Films during High Temperature Annealing, Surf. Sci., 2004, vol. 554, pp. L75-L80.
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  • 9
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    • Soft X-ray Photoemission Studies of Hf Oxidation
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    • 3 Gate Dielectric Stacks Grown by Atomic Layer Deposition on Si Substrates
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    • 0037175911 scopus 로고    scopus 로고
    • Mechanism of Interstitial Oxygen Diffusion in Hafnia
    • Foster, A.S., Shluger, A.L., and Nieminen, R.M., Mechanism of Interstitial Oxygen Diffusion in Hafnia, Phys. Rev. Lett., 2002, vol. 89, p. 225 901-1-4.
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  • 13
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    • Hafnium Oxide Gate Dielectrics Grown from an Alkoxide Precursor: Structure and Defects
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    • (2004) Mater. Sci. Eng., B , vol.109 , pp. 6-10
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    • 2 Films on Si (100) Grown by Atomic-Layer Deposition
    • 2 Films on Si (100) Grown by Atomic-Layer Deposition, Appl. Phys. Lett., 2002, vol. 81, pp. 412-474.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.