Formation of Ti-Si-N film using low frequency, high density inductively coupled plasma process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2444-2448

  Ee, Y C ^a,b   Chen, Z ^b   Chan, L ^a   See, K H ^a   Law, S B ^a   Xu, S ^c   Tsakadze, Z L ^c   Rutkevych, P P ^c   Zeng, K Y ^d   Shen, L ^d  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; DIFFUSION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; TITANIUM COMPOUNDS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

DIFFUSION BARRIER; FILM SHEETS; RESISTIVITY PROBE; SHEET RESISTANCE;

INDUCTIVELY COUPLED PLASMA;

EID: 29044450206     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2131080     Document Type: Article

References (20)

1. C. Marcadal, M. Eizenberg, Alex Yoon, and L. Chen, J. Electrochem. Soc. 149, C52 (2002).
2. International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 2003).
3. E. Eisenbraun and A. Upham, J. Vac. Sci. Technol. B 18, 2011 (2000).
4. E. Norton, Jr. and C. C. Amato-Wierda, Surf. Coat. Technol. 148, 251 (2001).
5. J. S. Reid, X. Sun, E. Kolawa, and M.-A. Nicolet, IEEE Electron Device Lett. 15, 298 (1994).
6. C. Prindle, B. Brennan, D. Denning, I. Shahvandi, S. Guggilla, L. Chen, C. Marcadal, D. Deyo, and U. Bhandary, Proceedings of the IEEE 2002 International Interconnect Technology Conference (Institute of Electrical and Electronics Engineering, San Francisco, CA, 2002), pp. 182-184.
7. C. H. L. Gooodman and M. V. Pessa, J. Appl. Phys. 60, R65 (1986).
8. J. S. Min, Y. W. Son, W. G. Kang, S. S. Chun, and S. W. Kang, Jpn. J. Appl. Phys., Part 1 37, 4999 (1998).
9. P. M. Smith and J. S. Custer, Appl. Phys. Lett. 70, 3116 (1997).
10. J. S. Min, H. S. Park, and S. W. Kang, Appl. Phys. Lett. 75, 1521 (1999).
11. N. Yuokoyama, K. Hinode, and Y. Homma, J. Electrochem. Soc. 138, 190 (1991).
12. J. O. Olowolafe, J. A. Lie, J. W. Mayer, and E. G. Colgan, Appl. Phys. Lett. 58, 469 (1991).
13. Luís da Silva Zambom, Ronaldo Domingues Mansano, and Roǵrio Furlan, Vacuum 65, 213 (2002).
14. I. Barin, F. Sauert, E. Schultze-Rhonhof, and W. S. Sheng, Thermochemical Data of Pure Substances, 2nd ed. (Weinheim, Federal Republic of Germany, 1993).
15. W. Posadowski, Thin Solid Films 162, 111 (1988).
16. S. Joseph, M. Eizerberg, C. Marcadal, and L Chen, J. Vac. Sci. Technol. B 20, 1471 (2002).
17. Y. Miura and S. Fujieda, J. Appl. Phys. 81, 6476 (1997).
18. E. Ivanov, Thin Solid Films 332, 325 (1998).
19. D. Fischer, T. Scherg, J. G. Bauer, H.-J. Schulze, and C. Wenzel, Microelectron. Eng. 50, 459 (2000).
20. Y. C. Ee, Z. Chen, D. Z. Chi, W. D. Wang, S. Xu, and S. B. Law, Surf. Coat. Technol. 198, 291 (2005).