Evaluation of tantalum silicide sputtering target materials for amorphous Ta-Si-N diffusion barrier for Cu metallization

Thin Solid Films

Volumn 332, Issue 1-2, 1998, Pages 325-328

  Ivanov, Eugene ^a  

^a Tosoh SMD Inc   (United States)

Author keywords

Barrier layer; Cu metallization; Sputtering target; Ta Si N; Tantalum silicide

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNETRON SPUTTERING; METALLIZING; METALLOGRAPHIC MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; SURFACE PROPERTIES; TANTALUM COMPOUNDS; X RAY CRYSTALLOGRAPHY;

SPUTTERING GAS; TANTALUM SILICIDE;

AMORPHOUS FILMS;

EID: 0032476324     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01027-X     Document Type: Article

References (8)

1. E. Kobawa, J.S. Chen, J.S. Reid, P.J. Pokela, M.-A. Nocolet, J. Appl. Phys. 70 (1991) 1369.
2. J.M.E. Harper, E.G. Colgan, C.-K. Hu, J.P. Hummel, L.P. Buchwalter, C.E. Uzoh, MRS Bull. (1994) 23.
3. S.-Q. Wang, MRS Bull. (1994) 30.
4. T.B. Massalski, (Ed.), Binary Phase Diagrams, The Materials Information Society, Materials Park, 1991.
5. K.N. Tu, J.W. Mayer, Thin Film Interdiffusion and Reactions, in: J.M. Poate, K.N. Tu, J.W. Mayer (Eds.), Wiley, New York, 1978 p. 385.
6. A. Noya, M. Takeyama, K. Sasaki, E. Aoyagi, K. Hiraga, J. Vac. Sci. Technol. A 15 (2) (1997) 253.
7. M.F. Ashby, HIP 6.0 Background Reading and Operating Manual, Engineering Department, Cambridge, January, 1990.
8. E. Ivanov, US Patent Pending 60/052,533, July 15, 1997.