4 inch lift-off process by trilayer nanoimprint lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2914-2919

  Tallal, J ^a   Berton, K ^a   Gordon, M ^a   Peyrade, D ^a  

^a Joseph Fourier University   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GEOMETRY; INDENTATION; NANOSTRUCTURED MATERIALS; PLASMA ETCHING; PROBES; RELIABILITY;

NANOIMPRINT LITHOGRAPHY (NIL); NANOIMPRINT PROCESSES; PATTERN GEOMETRY; RESIST THICKNESS;

LITHOGRAPHY;

EID: 29044448354     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2130351     Document Type: Article

References (20)

1. S. Y. Chou, Appl. Phys. Lett. 67, 3114 (1995).
2. W. Zhang and S. Y. Chou, Appl. Phys. Lett. 83, 1632 (2003).
3. Y. Chen, Microelectron. Eng. 67-68, 189 (2003).
4. M. D. Austin, Appl. Phys. Lett. 84, 5299 (2004).
5. C. Gourgon, J. Vac. Sci. Technol. B 21, 98 (2003).
6. F. Carcenac, Microelectron. Eng. 61-62, 657 (2002).
7. P. Carlberg, Microelectron. Eng. 67-68, 203 (2003).
8. Y. Chen, Eur. Phys. J.: Appl. Phys. 12, 223 (2000).
9. A. Lebib, Microelectron. Eng. 53, 175 (2000).
10. A. Lebib, Microelectron. Eng. 46, 319 (1999).
11. C. Perret, Microelectron. Eng. 73-74, 172 (2004).
12. X. Detter, J. Vac. Sci. Technol. B 21, 2174 (2003).
13. K. V. Guinn, J. Vac. Sci. Technol. B 13, 214 (1995).
14. J. Tallal, Microelectron. Eng. 78-79, 676 (2005).
15. A. Lebib, Microelectron. Eng. 53, 175 (2000).
16. H. Hertz and J. Reine, Angew. Math. 92, 156 (1882).
17. H.-Y. Nie, Thin Solid Films 273, 143 (1996).
18. C. Gourgon, J. Vac. Sci. Technol. B 22, 602 (2004).
19. F. Lazzarino (unpublished).
20. E. Süske, J. Appl. Phys. 97, 063501 (2005).