High electron mobility transistors fabricated by nanoimprint lithography

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 189-195

  Chen, Y ^a   Macintyre, D S ^a   Boyd, E ^a   Moran, D ^a   Thayne, I ^a   Thoms, S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Nanoimprint lithography; pHEMT; T gates

Indexed keywords

ELECTRON BEAMS; LITHOGRAPHY; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

NANOIMPRINT LITHOGRAPHY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037683123     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00183-7     Document Type: Conference Paper

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