17GHz and 24GHz LNA designs based on extended-S-parameter with microstrip-on-die in 0.18μm logic CMOS technology

European Solid-State Circuits Conference

Volumn , Issue , 2003, Pages 149-152

  Franca Neto, L M ^a   Bloechel, B A ^a   Soumyanath, K ^a  

^a INTEL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS TECHNOLOGY; CMOS TRANSISTORS; DEGREE OF FREEDOM; FREQUENCY OF OPERATION; HIGH-PERFORMANCE LOGIC; MICROWAVE DESIGNS; MINIMUM NOISE FIGURE; TRANSISTOR SIZE;

CMOS INTEGRATED CIRCUITS; DESIGN; SCATTERING PARAMETERS;

DIES;

EID: 27844559630     PISSN: 19308833     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSCIRC.2003.1257094     Document Type: Conference Paper

References (6)

1. Applied Wave Research, http:llwww. awr. com.
2. Foundations of microwave engineering. R. E. Collin Second Ed. McGraw Hill 1992.
3. The design of CMOS RF integrated circuits. Thomas H. Lee, Cambridge University Press 1998.
4. P. Leroux, J. Janssens and M. Steyaert, "A 0. 8dB NF ESD-Protected 9-mV CMOS LNA Operating at 1. 23GHz, " IEEE Journal of Solid-state Circuits, vol. 37, No. 6, June 2002.
5. Millimeter wave micro strip and printed circuit antenna design. P. Bhartia et. al. Artech House, l991.
6. X. Guan, A. Hajimiri, "A 24GHz CMOS Front-End, '' ESSCIRC 2002, Florence, Italy, September 2002.