Differential SiGe power amplifier for 3GPP WCDMA

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 133-136

  Juurakko, Pasi ^a   Saari, Ville ^a   Ryynänen, Jussi ^a   Halonen, Kari ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; POWER AMPLIFIERS; SILICON COMPOUNDS;

GAIN COMPRESSION;

CODE DIVISION MULTIPLE ACCESS;

EID: 0041589274     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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7. Liu W., Khatibzadeh A., Sweder J., Chau H.F. "The Use of Base Ballasting to Prevent the Collapse of Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors". IEEE Transactions on Electron Devices, Vol. 43, No. 2, pp. 245-251, February, 1996.
8. Zhang J., Jia H., Tsien P.H., Lo T.C. "Emitter-Ballasting-Resistor-Free SiGe Microwave Power Heterojunction Bipolar Transistor". IEEE Electron Device Letters, Vol. 20, No. 7, pp. 326-328, July, 1999.