SiGe/Si HBTs with current gain of negative temperature dependence

2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

Volumn 1, Issue , 2001, Pages 607-609

  Zou, Deshu ^a   Xu, Chen ^a   Chen, Jianxin ^a   Shi, Chen ^a   Du, Jinyu ^a   Deng, Jun ^a   Zhang, Li ^a   Shen, Guangdi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

current gain; negative temperature dependence; SiGe Si HBTs

Indexed keywords

EID: 84966658371     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2001.981552     Document Type: Conference Paper

References (3)

1. Schuppen S, Multi-Emitter Finger SiGe-HBTs with fmax up to 120GHz, Tech. Dig IEDM,1994,377-380
2. Prinxetal, The Effects of Base Dopant outdiffusion and Undoped Si/Si1-xGex/Si HBTs, IEEE Electric Devices Letter, 1992, 12(2), 42
3. Zou Deshu, Shen Guangdi, Research of Corrosion Technique in the Fabrication of SiGe/Si HBTs, Semiconductor Tech., 1997, (1), 26