Reliability assessment of ultra-thin HfO2 oxides with TiN gate and polysilicon-n+ gate

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 176-180

  Garros, X ^a,b   Leroux, C ^a   Reimbold, G ^a   Mitard, B ^a   Guillaumot, B ^a   Martin, F ^a   Autran, J L ^c  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; HAFNIUM COMPOUNDS; MOS CAPACITORS; MOSFET DEVICES; POLYSILICON; RELIABILITY THEORY; TITANIUM NITRIDE; ULTRATHIN FILMS;

ATOMIC LAYER DEPOSITION (ALD); GATE DIELECTRICS; HIGH-K DIELECTRICS; STRESS POLARITY;

GATES (TRANSISTOR);

EID: 3042656428     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

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