Annealing kinetics of implantation-induced amorphous layer in 6H-SiC (0001)

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 839-842

  Nakamura, Tomonori ^a   Matsumoto, Seiken ^a   Horibe, Tatsunobu ^a   Satoh, Masataka ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

(0001) Oriented 6H SiC; Annealing kinetics; Ion implantation induced amorphous layer

Indexed keywords

ANNEALING; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; KINETICS; AMORPHIZATION; AMORPHOUS MATERIALS; ARGON; CRYSTALS; ION IMPLANTATION; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

(0001)-ORIENTED 6H-SIC; AMORPHOUS LAYER; ANNEALING KINETICS; ANNEALING TEMPERATURES; SURFACE REGION; IMPLANTATION-INDUCED AMORPHOUS LAYERS;

SILICON CARBIDE;

EID: 0036435432     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.839     Document Type: Conference Paper

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