Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 384-390

  Landini, Barbara E ^a  

^a ENTEGRIS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; COMPOSITION EFFECTS; DOPING (ADDITIVES); EPITAXIAL GROWTH; MORPHOLOGY; POLYCRYSTALLINE MATERIALS;

SUSCEPTOR EFFECTS; VITREOUS CARBON;

SILICON CARBIDE;

EID: 0033879818     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0082-8     Document Type: Article

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