Optical characterization of n- and p-doped 4H-SiC by electroreflectance spectroscopy

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3540-3542

  Demir, Gazi ^a   Renfro, Timothy E ^a   Glosser, R ^a   Saddow, S E ^b  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ELECTROREFLECTANCE (ER) SPECTROSCOPY; POLYTYPES; VACUUM ULTRAVIOLET (VUV) MODULATION SPECTROSCOPY;

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL METHODS; CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTALLINE MATERIALS; DOPING (ADDITIVES); ELLIPSOMETRY; PHASE SHIFT; PROBLEM SOLVING;

SILICON CARBIDE;

EID: 2542464154     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1712037     Document Type: Article

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