Nanoscale MOS devices: Device parameter fluctuations and low-frequency noise

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5844, Issue , 2005, Pages 164-176

  Wong, Hei ^a,b   Iwai, Hiroshi ^a   Liou, J J ^c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c University of Central Florida   (United States)

Author keywords

Flicker noise; Nanoscale MOS transistor; Parameter fluctuation; Tunneling oxide

Indexed keywords

LEAKAGE CURRENTS; MATHEMATICAL MODELS; NANOTECHNOLOGY; PERMITTIVITY; THERMAL NOISE;

FLICKER NOISE; NANOSCALE MOS TRANSISTORS; PARAMETER FLUCTUATION; TUNNELING OXIDES;

MOS DEVICES;

EID: 28444437730     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.610124     Document Type: Conference Paper

References (53)

1. H. Iwai, "Future semiconductor manufacturing-challenges and opportunities," IEDM Tech. Digest, p.11-16, 2004
2. D. Frank, R. Dennard, E. Nowak, P. Solomon, Y. Taur, and H.-S, Wong, "Device scaling limits of Si MOSFETs and their application dependencies," Proc. IEEE, vol.89, pp.259-288, 2001.
3. H. Wong and H. Iwai, "On the scaling issues and high-k replacement of ultrathin gate dielectrics for nanoscale MOS transistors," to be published.
4. G. Abowite, E. Arnold and E. A. Leventhal, "Surface states and 1/f noise in MOS transistors," IEEE Trans. Electron Devices, vol.14, pp.775-777, 1967.
5. H. Wong, "Low-frequency noise study in electron devices: Historical review and update," Microelectron. Reliab., vol.43, pp.585-599, 2003.
6. S. Christensson and I. Lundstron, "Low frequency noise in MOS transistors-II. Experiments," Solid-State Electron., vol.11, pp.813-820, 1968.
7. F. Berz, "Theory of low frequency noise in Si MOSFET's," Solid-State Electron., vol.13, pp.631-637, 1970.
8. C. Surya and T. Y. Hsiang, "Theory and experiment on the 1/f noise in p-channel metal-oxide-semiconductor field-effect transistors," Phys. Rev. B, vol.33, pp.4898-4905, 1986.
9. J. H. Scofield, N. Borland and D.M. Fleetwood, "Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors," IEEE Trans. Electron Devices, vol.41, pp. 1946-1952, 1994.
10. H. Wong and Y.C. Cheng, "Modelling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electronic trapping-detrapping at the oxide-silicon interface," IEEE Trans. Electron Devices, vol.38, pp.1883-1888, 1991.
11. G. Reimbold, "Modified 1/f trapping noise theory and experiments in MOS transistors baised from weak to strong inversion-influence of interface states, " IEEE Trans. Electron Devices, vol.31, pp.1190-1198, 1984.
12. F. M. Klaassen, "Characterization of low 1/f noise in MOS transistor," IEEE Trans. Electron Devices, vol.18, pp.887-891, 1971.
13. H. Mikoshiba, "1/f noise in n-channel silicon gate MOS transistors," IEEE Trans. Electron Devices, vol.29, pp.965-970, 1982.
14. H. E Macs and S. H. Usmani, "1/f noise in thin oxide p-channel metal-nitride-oxide silicon transistors," J. Appl. Phys. vol.54, 1937-1949, 1983.
15. Z. Celik and T. Y. Hsiang, "Study of 1/f noise in N-MOSFET's linear region," IEEE Trans. Electron Devices, vol.32, pp.2797-2801, 1985.
16. H. S. Fu and C. T. Sah, "Theory and experiments on surface 1/fr noise," IEEE Trans. Electron Devices, vol.19, pp.273-285, 1972.
17. H. Wong and Y.C. Cheng, "Gate dielectric dependent flicker noise in metal-oxide- semiconductor transistors," J. Appl. Phys., vol.67, pp.863-867, 1990.
18. 2-Si interface utilizing the low-frequency noise measurement," IEEE Trans. Electron Devices, vol.37, pp. 1743-1749, 1990.
19. C. Nguyenduc, G. Ghibaudo, and F. Balestra, "MOSFET degradation studied by low-frequency noise, charge pumping, and static I(U) measurements," Phys. Stat. Sol. A, vol.126, pp.553-560, 1991.
20. C. Ciofi, B. Neri, "Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices," J. Phys. D, vol.33, p.R199, 2000.
21. L. K. J. Vandamme X. Li, "Change in DC and L/F noise characteristics of n-submicron MOSFETs due to hot-carrier degradation," Microelectron. Reliab., vol.38, pp. 29-35, 1998.
22. X. S. Li and L. K. J. Vandamme, "1/f noise in MOSFET as a diagnostic-tool, Solid-State Electron." vol.35, pp. 1477-1481, 1992.
23. C. Claeys, A. Mercha, and E. Simoen, "Low-frequency noise assessment for deep submicrometer CMOS technology nodes," J. Electrochem. Soc., vol.151, G307-G318, 2004.
24. H. Kimijima, T. Ohguro, B. Evans, B. Acker, J. Bloom, H. Mabuchi, D. L. Kwong, E. Morifuji, T. Yoshitomi, H. S. Momose, M. Kinugawa, Y. Katsumata, and H. Iwai, "Improvement of 1/f noise by VHP (Vetical High Pressure) oxynitride gate insulator for deep-submicron RF and analog CMOS," Digest of Technical Papers, Symp. VLSI Technol., pp. 119-120, 1990.
25. H. S. Momose, H. Kimijima, E. Morifuji, T. Yoshitomi, T. Ohguro, N. Nakamura, T. Morimoto, Y. Katsumata, and H. Iwai, "A study of flicker noise in 1.5-nm gate oxide MOSFETs in direct-tunneling regime," in IEDM Tech. Dig., 1998, pp. 923-926.
26. H. S. Momose, T. Ohguro, S. Nakamura, Y. Toyoshima, H. Ishiuchi, H. Iwai, "Ultrathin gate oxide CMOS on (111) surface-oriented Si substrate," IEEE Trans. Electron Devices, vol.49, pp.1597-1605, 2002.
27. A. L. McWhorter, "1/f noise and germanium surface properties," in Semiconductor Surface Physics, R. H. Kingston, ed., Philadelphia, Univ. Pennsylvania Press, 1957, p. 207.
28. H. Wong and Y.C. Cheng, "Instabilities of metal-oxide-semiconductor transistor with high temperature annealing of its gate-oxide in ammonia," J. Appl. Phys., vol.67, pp.7132-7138, 1990.
29. D. R. Wolters and A.T.A. Zegersvanduijnhoven, "Variation of the exponent of flicker noise in MOSFETs," Solid-State Electron., vol.42, pp.803-808, 1998.
30. E. Simoen and C. Claeys, "On the flicker noise in submicron silicon MOSFETs," Solid-State Electron., vol.43, pp.865-882, 1999.
31. P. O. Lauritzen, "Noise due to generation and recombination of carriers in p-n junction transition regions," IEEE Trans. Electron Devices, vol. 15, pp. 770-776, 1968.
32. H. Wong, "Modeling of the parasitic transistor-induced drain breakdown in MOSFET's," IEEE Trans. Electron Devices, vol.43, pp.2190-2196, 1996.
33. J. Kilmer, A. Van der Ziel, and G. Bosman, "Presence of mobility fluctuation 1/f noise identified in silicon PNP transistors," Solid-State Electron., vol. 26, pp. 71-74, 1983.
34. H. A. W. Markus and T. G. M. Kleinpenning, "Low-frequency noise in polysilicon emitter bipolar transistors," IEEE Trans. Electron Devices, vol. 42, pp. 720-727, Apr. 1995.
35. T. G. M. Kleinpenning, "Location of low-frequency noise sources in submicrometer bipolar transistors," IEEE Trans. Electron Devices, vol. 39, pp. 1501-1506, 1992.
36. T. G. M. Kleinpenning, "On 1/f mobility fluctuations in bipolar transistors," Physica B, vol. 138, pp. 244-252, 1986.
37. A. H. Pawlikiewicz, A. van der Ziel, G. S. Kousik, and C. M. Van Vliet, "Fundamental 1/f noise in silicon bipolar transistors," Solid-State Electronics, vol. 31, pp. 831-834, 1988.
38. M. J. Deen, S. Rumyantsev, R. Bashir, and R. Taylor, "Measurement and comparison of low frequency noise in npn and pnp polysilicon-emitter bipolar junction transistors," J. Appl. Phys., vol. 84, pp. 625-633, 1998.
39. A. van der Ziel, X. Zhang, and A. H. Pawlikiewicz, "Location of 1/f noise sources in BJT's and HBT's - I. Theory," IEEE Trans. Electron Devices, vol. 33, pp. 1371-1375, 1986.
40. J.-M. Routoure et al., "Crowding effects and low frequency noise in polysilicon emitter bipolar transistors," Solid-State Electron., vol. 43, pp. 931-936, 1999.
41. A. Mounib et al., "Low frequency (1/f) noise model for the base current in polysilicon emitter bipolar junction transistors," J. Appl. Phys, vol.79, pp. 3330-3336, 1996.
42. T. G. M. Kleinpenning, "Location of low-frequency noise sources in submicrometer bipolar transistors," IEEE Trans. Electron Devices, vol. 39, pp. 1501-1506, 1992.
43. Z. Cui, J. J. Liou, Y. Yue, H. Wong, "Substrate current, gate current and lifetime prediction in deep-submicron nMOS devices," Solid-State Electron., in press.
44. E. Simoen, U. Magnusson, and C. Claeys, "Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET," Appl. Surf. Sci., vol.63, pp.285-290, 1993.
45. J.H. Scofield, N. Borland, D.M. Fleetwood, "Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide- semiconductor field-effect transistor at low temperatures." Appl. Phys. Lett., vol.76, pp.3248-3250, 2000.
46. H. Wong and Y.C. Cheng, "Temperature dependence of low-frequency noise in n-channel MOS transistors," Appl. Surf. Sci., vol.39, pp.493-499, 1989.
47. L. K. J. Vandamme, X. S. Li and D. Rigaud. "1/f noise in MOS devices, mobility or number fluctuations." IEEE Trans. Electron Devices. vol.41, pp.1936-1945, 1994.
48. K.K. Hung, P. K. Ko, C. Hu, and Y. C. Cheng, "A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors," IEEE Trans. Electron Devices, vol.37, pp.654-664,. 1990.
49. V. A. Gritsenko, K. S. Zhuravlev, A. D. Milov, and H. Wong, "Photoluminescence and ESR properties of silicon nanoclusters/dots in silicon nitride," Thin Solid Films, vol.353, pp.20-24, 1999.
50. F. N. Hooge and A. M. H. Hoppenbrouwers, "1/f noise in continuous thin gold film," Physica, vol.45, pp.386-392, 1969.
51. D. P. Triantis, A. N. Birbas, and J. J. Zimmermann, "Flicker noise in submicron metal-oxide-semiconductor field-effect transistors with nitrided gate oxide," J. Appl. Phys., vol. 77, pp.6021-6025, 1995.
52. H. S. Momose, S. Nakamura, T. Ohguro, T. Yoshitomi, E. Morifuji, T. Morimoto, Y. Katsumata, and H. Iwai, "Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFET's: Uniformity, reliability, and dopant penetration of the gate oxide," IEEE Trans. Electron Devices, vol.45, pp.691-700,. 1998.
53. Z. Celik and T. Y. Hsiang, "Spectral dependence of 1/f noise on gate bias in N-MOSFET," Solid-State Electron., vol.30, pp.419-423, 1987.