Change in d.c. and 1/f noise characteristics of n-submicron MOSFETs due to hot-carrier degradation

Microelectronics Reliability

Volumn 38, Issue 1, 1998, Pages 29-35

  Vandamme, L K J ^a   Li, X ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; HOT CARRIERS; SPURIOUS SIGNAL NOISE;

DRAIN CURRENT; HOT-CARRIER (HC) STRESS;

MOSFET DEVICES;

EID: 0031640123     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00072-3     Document Type: Article

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