Crowding effects and low frequency noise in polysilicon emitter bipolar transistors

Solid-State Electronics

Volumn 43, Issue 5, 1999, Pages 931-936

  Routoure, Jean Marc ^a   Lepaisant, Jacques ^a   Bloyet, Daniel ^a   Bardy, Serge ^b   Lebailly, Jacques ^b  

^a Centre National de la Recherche Scientifique   (France)

^b PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; MATHEMATICAL MODELS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE;

BIPOLAR JUNCTION TRANSISTORS (BJT); CROWDING EFFECTS; LOW FREQUENCY NOISE ANALYSIS;

BIPOLAR TRANSISTORS;

EID: 0032681851     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00008-8     Document Type: Article

References (6)

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2. Caminade J. Ph.D. thesis, University Paul Sabatier, Toulouse, 1977.
3. Lary J.E., Anderson R.L. IEEE Trans. Electron Devices. 32:1985;2503.
4. Markus H., Kleinpenning T.G.M. IEEE Trans. Electron Devices. 42:1995;720.
5. Thornton R.D., DeWitt D., Gray P.E., Chenette E.R. Characteristics and limitations of transistors. 1966;24 John Wiley & Sons, New York.
6. Routoure JM, Lepaisant J, Bloyet D, Bardy S, Biard C, Gambus L, et al. J. Solid-St. Electron., in press.