Measurement and characterization of 6T SRAM cell current

Records of the IEEE International Workshop on Memory Technology, Design and Testing

Volumn , Issue , 2005, Pages 140-145

  Hsiao, Ching Hua ^a,b   Kwai, Ding Ming ^a  

^a Intellectual Property Library Company   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CELL CURRENT DISTRIBUTIONS; CIRCUIT DESIGN; PARAMETER VARIATIONS; SRAM BIT CELLS;

CHARACTERIZATION; COMPUTER SIMULATION; ELECTRIC CURRENT DISTRIBUTION; MONTE CARLO METHODS; THRESHOLD VOLTAGE;

STATIC RANDOM ACCESS STORAGE;

EID: 28344455115     PISSN: 10874852     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MTDT.2005.28     Document Type: Conference Paper

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