Strengthening TiN diffusion barriers for Cu metallization by lightly doping Al

Applied Physics Letters

Volumn 87, Issue 12, 2005, Pages 1-3

  Yang, L C ^a   Hsu, C S ^a   Chen, G S ^b   Fu, C C ^b,d   Zuo, J M ^c   Lee, B Q ^c  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c University of Illinois at Urbana Champaign   (United States)

^d TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COLUMNAR GRAINS; REACTIVE SPUTTERING; THERMOCHEMICAL STABILITY;

ALUMINUM; COPPER; DIFFUSION; DISSOCIATION; METALLIZING; MICROSTRUCTURE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPUTTERING; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

TITANIUM NITRIDE;

EID: 28344442346     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2056583     Document Type: Article

References (26)

1. S. Q. Wang, I. Raaijmarkers, B. J. Burrow, S. Suthar, S. Redkar, and K. B. Kim, J. Appl. Phys. 68, 5176 (1990).
2. K. C. Park, K. B. Kim, I. Raaijmarkers, and K. Ngan, J. Appl. Phys. 80, 5674 (1996).
3. F. Vaz, P. Machado, L. Rebouta, P. Cerqueira, P. Goudeau, J. P. Riviere, E. Alves, K. Pischow, and J. de Rijk, Surf. Coat. Technol. 174, 375 (2003).
4. K. Y. Lim, Y. S. Lee, Y. D. Chung, I. W. Lyo, C. N. Whang, J. Y. Won, and H. J. Kang, Appl. Phys. A: Mater. Sci. Process. 70, 431 (2000).
5. S. Inoue, H. Uchida, Y. Yoshinaga, and K. Koterazawa, Thin Solid Films 300, 171 (1997).
6. J. L. Huang and B. Y. Shew, J. Am. Ceram. Soc. 82, 696 (1999).
7. S. K. Rha, W. J. Lee, S. Y. Lee, Y. S. Hwang, Y. J. Lee, D. I. Kim, D. W. Kim, S. S. Chu, and C. O. Park, Thin Solid Films 320, 134 (1998).
8. J. S. Chun, I. Petrov, and J. E. Greene, J. Appl. Phys. 86, 3633 (1999).
9. J. Geng, A. Schüler, P. Oelhafen, P. Gantenbein, M. Düggelin, and R. Guggenheim, J. Appl. Phys. 86, 3460 (1999).
10. M. M. Lacerda, Y. H. Chen, B. Zhou, M. U. Guruz, and Y. W. Chung, J. Vac. Sci. Technol. A 17, 2915 (1999).
11. K. S. Gadre, T. L. Alford, and J. W. Mayer, Appl. Phys. Lett. 79, 3260 (2001).
12. S. H. Kim, K. T. Nam, A. Datta, and K. B. Kim, J. Appl. Phys. 92, 5512 (2002).
13. W. D. Münz, J. Vac. Sci. Technol. A 4, 2717 (1986).
14. D. Mclntyre, J. E. Greene, G. Kåkansson, J. E. Sundgren, and W. D. Münz, J. Appl. Phys. 67, 1542 (1990).
15. F. Vaz, L. Rebouta, M. Andritschky, M. F. da Silva, and J. C. Soares, J. Eur. Ceram. Soc. 17, 1971 (1997).
16. M. Witthaut, R. Cremer, A. von Richthofen, and D. Neuschütz, Fresenius' J. Anal. Chem. 361, 639 (1998).
17. S. Seal, A. Kale, K. Sundaram, and D. Jimenez, J. Vac. Sci. Technol. A 18, 1571 (2000).
18. P. W. Shum, Z. F. Zhou, K. Y. Li, and Y. G. Shen, Mater. Sci. Eng., B 100, 204 (2003).
19. I. Petrov, E. Mojab, F. Adibi, J. E. Greene, L. Hultman, and J. E. Sundgren, J. Vac. Sci. Technol. A 11, 11 (1993).
20. A. Tempez, A. Bensaoula, and A. Schultz, J. Vac. Sci. Technol. A 20, 1320 (2002).
21. Y. Matsui, M. Hiratani, Y. Nakamura, I. Asano, and F. Yano, J. Vac. Sci. Technol. A 20, 605 (2000).
22. Handbook of Multilevel Metallization for Integrated Circuits, edited by, S. R. Wilson, C. J. Tracy, and, J. L. Freeman Jr., (Noyes, New York, 1993), p. 778.
23. K. C. Park and K. B. Kim, J. Electrochem. Soc. 142, 3109 (1995).
24. D. J. Eaglesham, J. E. Bower, M. A. Marcus, M. Gross, and S. Merchant, Appl. Phys. Lett. 71, 219 (1997).
25. G. S. Chen and S. T. Chen, J. Appl. Phys. 87, 8473 (2000).
26. D. L. Smith, Thin Film Deposition: Principles & Practice, (McGraw-Hill, New York, 1995), p. 161.